Temperature field of the thin metal layer
https://doi.org/10.18384/2949-5067-2026-2-34-45
Abstract
Aim. Solving the problem of the distribution of the temperature field over the thickness of a thin metal layer with boundary conditions of the first kind due to the release of Joule heat during the passage of an electric current, taking into account the coefficients of specularity of the conductor surfaces.
Methodology. The paper presents a mathematical description of the temperature field distribution inside a thin metal layer based on a kinetic approach.
Results. The variation of the specularity coefficients when electrons are reflected from the surfaces of a thin metal layer in the case of a high-frequency current passing through it causes uneven heating of the layer, which differs significantly from the classical results.
Research implications. The theoretical and practical significance lies in calculating the temperature conditions of integrated circuits during their operation.
About the Authors
E. V. ZavitaevRussian Federation
Eduard Valerievich Zavitaev – Dr. Sci. (Phys.-Math.), Prof., Department K6 “Higher Mathematics and Physics”
Mytishchi, Moscow Region
O. C. Rusakov
Russian Federation
Oleg Vladimirovich Rusakov – Cand. Sci. (Phys.-Math.), Assoc. Prof., Department of Computer Science and Physics
Orekhovo-Zuyevo, Moscow Region
A. I. Utkin
Russian Federation
Alexey Igorevich Utkin – Cand. Sci. (Phys.-Math.), Assoc. Prof., Department of Computer Science and Physics
Orekhovo-Zuyevo, Moscow Region
E. P. Chukhleb
Russian Federation
Ekaterina Petrovna Chukhleb – teacher of additional education
Chernogolovka, Moscow region
References
1. Borilo, L. P. (2012). Thin-Film Inorganic Nanosystems. Tomsk: Tomsk State University publ. (in Russ.).
2. Danilina, T. I. (2006). Thin-Film Microcircuit Technology. Tomsk: Tomsk Interuniversity Center for Distance Education publ. (in Russ.).
3. Antonenko, S. V. (2008). Thin Film Technology. Moscow: MEPhI publ. (in Russ.).
4. Petrov, Yu. I. (1982). Small Particle Physics. Moscow: Nauka publ. (in Russ.).
5. Utkin, A. I., Zavitaev, E. V. & Yushkanov, A. A. (2016). Calculation of Electrical Conductivity of Thin Metal Layer with Different Surface Specularity Coefficients. In: Journal of Surface Investigation: X-Ray, Synchrotron and Neutron Techniques, 9, 85–91. DOI: 10.7868/S0207352816090158 (in Russ.).
6. Kuznetsova, I. A., Savenko, O. V. & Yushkanov, A. A. (2017). Influence of Boundary Conditions on the Electric and Galvanomagnetic Properties of a Thin Metal Film. In: Journal of Surface Investigation: X-Ray, Synchrotron and Neutron Techniques, 11, 52–60. DOI: 10.7868/S0207352817110063 (in Russ.).
7. Kuznetsova, I. A., Romanov, D. N., Savenko, O. V. & Yushkanov, A. A. (2017). Calculating the high-frequency electrical conductivity of a thin semiconductor film for different specular reflection coefficients of its surface. In: Russian Microelectronics, 46 (4), 252–260. DOI: 10.1134/S1063739717040059 (in Russ.).
8. Kuznetsova, I. A., Savenko, O. V. & Yushkanov, A. A. (2017). Calculation of the RF Conductivity and Hall Constant of a Thin Metal Film. In: Technical Physics, 62 (12), 1766 1771. DOI: 10.1134/S1063784217120143 (in Russ.).
9. Zavitaev, E. V., Rusakov, O. V., Simonova, T. E. & Utkin, A. I. (2025). The Conductivity of a Thin Layer in the Case of an Inhomogeneous Electric Field. In: Modern Electrodynamics, 3 (17), 4–13. DOI: 10.24412/2949-0553-2025-317-04-13 (in Russ.).
10. Baskakov, A. P. (ed.) (1991). Heat Engineering. Moscow: Energoatomizdat publ. (in Russ.).
11. Arkharov, A. M. & Afanasyev, V. N. (eds.) (2004). Heat Engineering. Moscow: Heat Engineering. Moscow: Bauman Moscow State Technical University publ. (in Russ.).
12. Landau, L. D. & Lifshits, E. M. (2005). Electrodynamics of Continuous Media. Moscow: FIZMATLIT publ. (in Russ.).
13. Zavitaev, E. V, Rusakov, O. V. & Chukhleb, E. P. (2019). Local conductivity of a submicron metal layer with allowance for a correction to the Wiedemann–Franz law. In: Bulletin of the Moscow Region State University. Series: Physics and Mathematics, 2, 74–82. DOI: 10.18384/2310-7251-2019-2-74-82 (in Russ.).
Review
JATS XML

























