Methods for controlling the thickness of the epitaxial silicon layer
https://doi.org/10.18384/2949-5067-2023-3-33-42
Abstract
Aim. Review of destructive and non-destructive methods for controlling the thickness of the epitaxial silicon layer (Si). The determination of thin film parameters is an important problem for condensed matter physics. Modern methods of control, such as spherical slot, ellipsometry and IR-Fourier spectrometry, which are poorly represented in the scientific literature, are given.
Methodology. Practical experience is analyzed and the main results are presented.
Results. The main approaches to determining the thickness of epitaxial layers are summarized.
Research implications. A method for determining the thickness of the Si epitaxial film and the depth of the p–n junction with a spherical strip is considered in depth.
About the Author
T. Zakharova
Peoples' Friendship University of Russia named after Patrice Lumumba
Russian Federation
Russian Federation
Tatyana I. Zakharova, Master's Degree Student
Engineering Academy
117198
ulitsa Miklukho-Maklaya 6
Moscow
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