Моделирование параметров материалов плёнок прозрачных электродов с близкой к нулю диэлектрической проницаемостью

Цель: исследовать влияние параметров материала прозрачного электрода на основе оксида металла (N – плотность электронов, τ – среднее время рассеяния электронов) на величину частоты, при которой диэлектрическая проницаемость материала ε (эпсилон) становится близкой к нулю (так называемые ENZ или НЭ-материалы).

Процедура и методы. С использованием модели Друде выполнены расчёты параметров N, τ и плазменной частоты ω0 в диапазоне параметров материалов, применяемых в электронике, а также для композитных материалов с разной геометрией включений. Приведены параметры материалов на основе оксида цинка и методов их формирования, при которых может реализоваться описанный режим близкой к нулю диэлектрической проницаемости материала.

Результаты. Для ряда материалов плёнок прозрачных электродов, применяемых в устройствах управления излучением ближнего ИК-диапазона, исследовано влияние параметров материала (N, τ) на величину частоты, при которой диэлектрическая проницаемость материала ε (эпсилон) становится близкой к нулю (НЭ-материалы). Описаны технологии материалов, в которых может реализоваться НЭ-режим.

Теоретическая и/или практическая значимость. Описанный режим реализуется для ряда материалов плёнок прозрачных электродов, применяемых в устройствах управления излучением ближнего ИК-диапазона.

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