Interaction of an electromagnetic H-wave with a semiconductor nanolayer located between two dielectric median
https://doi.org/10.18384/2310-7251-2022-3-39-57
Abstract
Aim. The purpose of the paper is to theoretically simulate optical characteristics of a semiconductor nanolayer sandwiched between two dielectric media.
Methodology. The quantum theory of transport phenomena is used, which consists in finding the density operator matrix elements by solving the Liouville equation. The surface scattering of charge carriers is taken into account through the Soffer boundary conditions.
Results. Analytical expressions are derived for the optical coefficients as functions of the nanolayer thickness, the electromagnetic wave frequency and incidence angle, the media dielectric constants, the chemical potential, and the surface roughness parameters. The dependences of optical coefficients on the above parameters are analyzed for the limiting cases of a degenerate and nondegenerate electron gas. It is shown that for total internal reflection, the oscillation amplitudes of the dependences of reflection and absorption coefficients on the thickness become comparable.
Research implications. The obtained results can be used for producing layered nanostructures and nanocoatings with specified optical characteristics.
About the Authors
O. V. Savenko
P.G. Demidov Yaroslavl State University
Russian Federation
Russian Federation
Oleg Vladislavovich Savenko – Cand. Sci. (Phys.-Math.), Researcher, The Facilities Sharing Centre “Diagnostics of Micro- and Nanostructures”
ul. Sovetskaya 14, Yaroslavl 150000
I. A. Kuznetsova
P.G. Demidov Yaroslavl State University
Russian Federation
Russian Federation
Irina Alexandrovna Kuznetsova – Dr. Sci. (Phys.-Math.), Departmental Head, Department of Microelectronics and General Physics
ul. Sovetskaya 14, Yaroslavl 150000
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