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<article article-type="research-article" dtd-version="1.3" xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink" xmlns:xsi="http://www.w3.org/2001/XMLSchema-instance" xml:lang="ru"><front><journal-meta><journal-id journal-id-type="publisher-id">phmath</journal-id><journal-title-group><journal-title xml:lang="ru">Вестник Государственного университета просвещения. Серия: Физика-Математика</journal-title><trans-title-group xml:lang="en"><trans-title>Bulletin of Federal State University of Education. Series: Physics and Mathematics</trans-title></trans-title-group></journal-title-group><issn pub-type="ppub">2949-5083</issn><issn pub-type="epub">2949-5067</issn><publisher><publisher-name>Federal State University of Education</publisher-name></publisher></journal-meta><article-meta><article-id pub-id-type="doi">10.18384/2310-7251-2019-1-74-82</article-id><article-id custom-type="elpub" pub-id-type="custom">phmath-8</article-id><article-categories><subj-group subj-group-type="heading"><subject>Research Article</subject></subj-group><subj-group subj-group-type="section-heading" xml:lang="ru"><subject>РАЗДЕЛ II. ФИЗИКА</subject></subj-group><subj-group subj-group-type="section-heading" xml:lang="en"><subject>SECTION II. PHYSICS</subject></subj-group></article-categories><title-group><article-title>МЕТОДЫ СОВЕРШЕНСТВОВАНИЯ ХАРАКТЕРИСТИК ПРОЗРАЧНЫХ ЭЛЕКТРОДОВ НА ОСНОВЕ ОКСИДА ЦИНКА</article-title><trans-title-group xml:lang="en"><trans-title>IMPROVING CHARACTERISTICS OF ZINC OXIDE TRANSPARENT ELECTRODES</trans-title></trans-title-group></title-group><contrib-group><contrib contrib-type="author" corresp="yes"><name-alternatives><name name-style="eastern" xml:lang="ru"><surname>Абдуев</surname><given-names>А. Х.</given-names></name><name name-style="western" xml:lang="en"><surname>Abduev</surname><given-names>A. Kh.</given-names></name></name-alternatives><email xlink:type="simple">a_abduev@mail.ru</email><xref ref-type="aff" rid="aff-1"/></contrib><contrib contrib-type="author" corresp="yes"><name-alternatives><name name-style="eastern" xml:lang="ru"><surname>Асваров</surname><given-names>А. Ш.</given-names></name><name name-style="western" xml:lang="en"><surname>Asvarov</surname><given-names>A. Sh.</given-names></name></name-alternatives><email xlink:type="simple">abil-as@list.ru</email><xref ref-type="aff" rid="aff-1"/></contrib><contrib contrib-type="author" corresp="yes"><name-alternatives><name name-style="eastern" xml:lang="ru"><surname>Ахмедов</surname><given-names>А. К.</given-names></name><name name-style="western" xml:lang="en"><surname>Ahmedov</surname><given-names>A. K.</given-names></name></name-alternatives><email xlink:type="simple">cht-if-ran@mail.ru</email><xref ref-type="aff" rid="aff-1"/></contrib><contrib contrib-type="author" corresp="yes"><name-alternatives><name name-style="eastern" xml:lang="ru"><surname>Беляев</surname><given-names>В. В.</given-names></name><name name-style="western" xml:lang="en"><surname>Belyaev</surname><given-names>V. V.</given-names></name></name-alternatives><email xlink:type="simple">vic_belyaev@mail.ru</email><xref ref-type="aff" rid="aff-2"/></contrib><contrib contrib-type="author" corresp="yes"><name-alternatives><name name-style="eastern" xml:lang="ru"><surname>Скворцов</surname><given-names>А. Ю.</given-names></name><name name-style="western" xml:lang="en"><surname>Skvortsov</surname><given-names>A. Y.</given-names></name></name-alternatives><email xlink:type="simple">vic_belyaev@mail.ru</email><xref ref-type="aff" rid="aff-3"/></contrib><contrib contrib-type="author" corresp="yes"><name-alternatives><name name-style="eastern" xml:lang="ru"><surname>Пленцова</surname><given-names>Д. С.</given-names></name><name name-style="western" xml:lang="en"><surname>Plentsova</surname><given-names>D. S.</given-names></name></name-alternatives><email xlink:type="simple">vic_belyaev@mail.ru</email><xref ref-type="aff" rid="aff-3"/></contrib></contrib-group><aff-alternatives id="aff-1"><aff xml:lang="ru"><institution>Институт физики имени Х. И. Амирханова Дагестанского научного центра РАН</institution><country>Россия</country></aff><aff xml:lang="en"><institution>Institute of Physics of the Dagestan Science Center of the Russian Academy of Sciences</institution><country>Russian Federation</country></aff></aff-alternatives><aff-alternatives id="aff-2"><aff xml:lang="ru"><institution>Московский государственный областной университет; Российский университет дружбы народов</institution><country>Россия</country></aff><aff xml:lang="en"><institution>Moscow Region State University; RUDN University</institution><country>Russian Federation</country></aff></aff-alternatives><aff-alternatives id="aff-3"><aff xml:lang="ru"><institution>Московский государственный областной университет</institution><country>Россия</country></aff><aff xml:lang="en"><institution>Moscow Region State University</institution><country>Russian Federation</country></aff></aff-alternatives><pub-date pub-type="collection"><year>2019</year></pub-date><pub-date pub-type="epub"><day>14</day><month>02</month><year>2022</year></pub-date><volume>0</volume><issue>1</issue><fpage>74</fpage><lpage>82</lpage><permissions><copyright-statement>Copyright &amp;#x00A9; Абдуев А.Х., Асваров А.Ш., Ахмедов А.К., Беляев В.В., Скворцов А.Ю., Пленцова Д.С., 2022</copyright-statement><copyright-year>2022</copyright-year><copyright-holder xml:lang="ru">Абдуев А.Х., Асваров А.Ш., Ахмедов А.К., Беляев В.В., Скворцов А.Ю., Пленцова Д.С.</copyright-holder><copyright-holder xml:lang="en">Abduev A.K., Asvarov A.S., Ahmedov A.K., Belyaev V.V., Skvortsov A.Y., Plentsova D.S.</copyright-holder><license xml:lang="ru" license-type="creative-commons-attribution" xlink:href="https://creativecommons.org/licenses/by/4.0/" xlink:type="simple"><license-p>Данная работа распространяется под лицензией Creative Commons Attribution 4.0.</license-p></license><license xml:lang="en" license-type="creative-commons-attribution" xlink:href="https://creativecommons.org/licenses/by/4.0/" xlink:type="simple"><license-p>This work is licensed under a Creative Commons Attribution 4.0 License.</license-p></license></permissions><self-uri xlink:href="https://www.physmathmgou.ru/jour/article/view/8">https://www.physmathmgou.ru/jour/article/view/8</self-uri><abstract><p>Изучено влияние состава потока реагентов на условия формирования и структуру слоёв на основе ZnO. Показано, что ключевым резервом в увеличении электропроводности и подвижности носителей заряда прозрачных электродов на основе ZnO:Ga является повышение структурного совершенства слоёв. Анализ полученных результатов исследований показывает, что увеличение парциального давления паров металла в газовой фазе влечёт за собой соответствующее увеличение подвижности компонентов и увеличение кристаллического совершенства синтезируемых поликристаллических слоёв.</p></abstract><trans-abstract xml:lang="en"><p>The influence of the composition of the reagent flow on the formation conditions and the structure of ZnO-based layers is studied. It is shown that a key reserve in increasing the electrical conductivity and mobility of charge carriers of Ga-doped ZnO transparent electrodes is to increase the structural perfection of the layers. Analysis of the obtained results shows that an increase in the partial pressure of metal vapors in the gas phase entails a corresponding increase in the mobility of the components and an increase in the crystalline perfection of the synthesized polycrystalline layers.</p></trans-abstract><kwd-group xml:lang="ru"><kwd>физика твёрдого тела</kwd><kwd>прозрачный электрод</kwd><kwd>сопротивление</kwd><kwd>температура</kwd><kwd>синтез</kwd></kwd-group></article-meta></front><back><ref-list><title>References</title><ref id="cit1"><label>1</label><citation-alternatives><mixed-citation xml:lang="ru">Flexible Electronics: Materials and Applications / W. S. Wong, A. Salleo, eds. US: Springer, P. 473-442.</mixed-citation><mixed-citation xml:lang="en">Flexible Electronics: Materials and Applications / W. S. Wong, A. Salleo, eds. US: Springer, P. 473-442.</mixed-citation></citation-alternatives></ref><ref id="cit2"><label>2</label><citation-alternatives><mixed-citation xml:lang="ru">Mochel J. M. 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