phmathВестник Государственного университета просвещения. Серия: Физика-МатематикаBulletin of Federal State University of Education. Series: Physics and Mathematics2949-50832949-5067Federal State University of Education10.18384/2949-5067-2023-3-33-42phmath-603Research ArticleФИЗИКАPHYSICSМетоды контроля толщины эпитаксиального слоя кремнияMethods for controlling the thickness of the epitaxial silicon layerЗахароваТ. И.ZakharovaT.

Татьяна Ивановна Захарова, магистрант

Инженерная академия

117198

ул. Миклухо-Маклая, д. 6

Москва

Tatyana I. Zakharova, Master's Degree Student

Engineering Academy

117198

ulitsa Miklukho-Maklaya 6

Moscow

tatyana.z94@icloud.comРоссийский университет дружбы народов имени Патриса ЛумумбыРоссияPeoples' Friendship University of Russia named after Patrice LumumbaRussian Federation202329112023033342Copyright © Захарова Т.И., 20242024Захарова Т.И.Zakharova T.Данная работа распространяется под лицензией Creative Commons Attribution 4.0.This work is licensed under a Creative Commons Attribution 4.0 License.https://www.physmathmgou.ru/jour/article/view/603   Цель

   Цель. Обзор разрушающих и неразрушающих методов контроля толщины эпитаксиального слоя кремния (Si). Определение параметров тонкой плёнки является важной задачей для физики конденсированного состояния. Приведены современные способы контроля, такие как сферический шлиф, эллипсометрия и ИК-Фурье спектрометрия, слабо представленные в научной литературе.

   Процедура и методы

   Процедура и методы. Проанализирован практический опыт и изложены основные результаты.

   Результаты

   Результаты. Обобщены основные подходы к определению толщины эпитаксиальных слоёв.

   Теоретическая значимость заключается в углублённом рассмотрении метода определения толщины эпитаксиальной плёнки Si и глубины залегания p-n перехода сферическим шлифом.

   Aim

   Aim. Review of destructive and non-destructive methods for controlling the thickness of the epitaxial silicon layer (Si). The determination of thin film parameters is an important problem for condensed matter physics. Modern methods of control, such as spherical slot, ellipsometry and IR-Fourier spectrometry, which are poorly represented in the scientific literature, are given.

   Methodology

   Methodology. Practical experience is analyzed and the main results are presented.

   Results

   Results. The main approaches to determining the thickness of epitaxial layers are summarized.

   Research implications

   Research implications. A method for determining the thickness of the Si epitaxial film and the depth of the p–n junction with a spherical strip is considered in depth.

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The authors declare that there are no conflicts of interest present.