phmathВестник Государственного университета просвещения. Серия: Физика-МатематикаBulletin of Federal State University of Education. Series: Physics and Mathematics2949-50832949-5067Federal State University of Education10.18384/2310-7251-2023-1-45-59phmath-580Research ArticleФИЗИКАPHYSICSМоделирование параметров материалов плёнок прозрачных электродов с близкой к нулю диэлектрической проницаемостьюModeling of material parameters of transparent electrode films with near-zero permittivityСоломатинА. С.SolomatinA. S.

Соломатин Алексей Сергеевич – доктор технических наук, профессор кафедры информатики и компьютерного проектирования

125047, г. Москва, Миусская площадь, д. 9

Alexey S. Solomatin – Dr. Sci. (Engineering), Prof., Department of Informatics and Computer Design

Miusskaya ploshchad 9, Moscow 125047

Sotrudnica_unc@mail.ruБеляевВ. В.BelyaevV. V.

Беляев Виктор Васильевич – доктор технических наук, профессор, главный научный сотрудник отдела организации научных исследований и международных связей управления развития науки, профессор кафедры фундаментальной физики и нанотехнологии Государственного университета просвещения; профессор кафедры нанотехнологий и микросистемной техники Инженерной академии Российского университета дружбы народов

141014, Московская область, г. Мытищи, ул. Веры Волошиной, д. 24

117198, Москва, ул. Миклухо-Маклая, д. 6

Victor V. Belyaev – Dr. Sci. (Engineering), Prof., Leading Researcher, Department of Organization of Scientific Research and International Relations of the Department of Science Development, Prof., Department of Fundamental Physics and Nanotechnology, State University of Education; Senior Researcher, Engineering Academy, RUDN University (People’s Friendship University of Russia)

ulitsa Very Voloshinoi 24, Mytishchi 141014, Moscow Region

Miklukho-Maklaya St, Moscow, 117198

vic_belyaev@mail.ruАбдуевА. Х.AbduevA. Kh.

Абдуев Аслан Хаджимуратович – кандидат физико-математических наук, доцент, доцент кафедры нанотехнологий и микросистемной техники Инженерной академии Российского университета дружбы народов; старший научный сотрудник учебно-научной лаборатории теоретической и прикладной нанотехнологии Государственного университета просвещения

117198, Москва, ул. Миклухо-Маклая, д. 6

141014, Московская область, г. Мытищи, ул. Веры Волошиной, д. 24

Aslan Kh. Abduev – Cand. Sci. (Phys.-Math.), Assoc. Prof., Department of Nanotechnology and Microsystem Engineering, Engineering Academy, RUDN University (People’s Friendship University of Russia)

ulitsa Very Voloshinoi 24, Mytishchi 141014, Moscow Region

Miklukho-Maklaya St, Moscow, 117198

a_abduev@mail.ruЗверевН. В.ZverevN. V.

Зверев Николай Витальевич – кандидат физико-математических наук, доцент, доцент кафедры высшей алгебры, математического анализа и геометрии

141014, Московская область, г. Мытищи, ул. Веры Волошиной, д. 24

Nikolay V. Zverev – Cand. Sci. (Phys.-Math.), Assoc. Prof., Department of Higher Algebra, Mathematical Analysis and Geometry

ulitsa Very Voloshinoi 24, Mytishchi 141014, Moscow Region

zverev_nv@mail.ruБеляевА. А.BelyaevA. A.

Беляев Андрей Андреевич – инженер учебно-научной лаборатории теоретической и прикладной нанотехнологии

141014, Московская область, г. Мытищи, ул. Веры Волошиной, д. 24

Andrey A. Belyaev – Engineer, Educational and Scientific Laboratory of Theoretical and Applied Nanotechnology

ulitsa Very Voloshinoi 24, Mytishchi 141014, Moscow Region

aa.belyaev@mgou.ruЦареваЕ. В.TsarevaE. V.

Царева Елена Владимировна – кандидат технических наук, доцент кафедры информатики и компьютерного проектирования

125047, г. Москва, Миусская площадь, д. 9

Elena V. Tsareva – Cand. Sci. (Engineering), Assoc. Prof., Department of Informatics and Computer Design

Miusskaya ploshchad 9, Moscow 125047

Sotrudnica_UNC@mail.ruКузьминМ. К.KuzminM. M.

Кузьмин Михаил Кузьмич – доктор физико-математических наук, профессор, профессор кафедры фундаментальной физики и нанотехнологии

141014, Московская область, г. Мытищи, ул. Веры Волошиной, д. 24

Mikhail K. Kuzmin – Dr. Sci. (Phys.-Math.), Prof., Department of Fundamental Physics and Nanotechnology

ulitsa Very Voloshinoi 24, Mytishchi 141014, Moscow Region

m.kuzmin48@yandex.ruЖачкинВ. А.ZhachkinV. A.

Жачкин Владимир Арефьевич – доктор физико-математических наук, профессор, профессор кафедры фундаментальной физики и нанотехнологии

141014, Московская область, г. Мытищи, ул. Веры Волошиной, д. 24

Vladimir A. Zhachkin – Dr. Sci. (Phys.-Math.), Prof., Department of Fundamental Physics and Nanotechnology

ulitsa Very Voloshinoi 24, Mytishchi 141014, Moscow Region

v_zhachkin@mail.ruРоссийский химико-технологический университет имени Д. И. МенделееваРоссияDmitry Mendeleev University of Chemical Technology of RussiaRussian FederationГосударственный университет просвещения; Российский университет дружбы народовРоссияState University of Education; RUDN UniversityRussian FederationГосударственный университет просвещенияРоссияState University of EducationRussian Federation202303042023014559Copyright © Соломатин А.С., Беляев В.В., Абдуев А.Х., Зверев Н.В., Беляев А.А., Царева Е.В., Кузьмин М.К., Жачкин В.А., 20232023Соломатин А.С., Беляев В.В., Абдуев А.Х., Зверев Н.В., Беляев А.А., Царева Е.В., Кузьмин М.К., Жачкин В.А.Solomatin A.S., Belyaev V.V., Abduev A.K., Zverev N.V., Belyaev A.A., Tsareva E.V., Kuzmin M.M., Zhachkin V.A.Данная работа распространяется под лицензией Creative Commons Attribution 4.0.This work is licensed under a Creative Commons Attribution 4.0 License.https://www.physmathmgou.ru/jour/article/view/580Цель

Цель: исследовать влияние параметров материала прозрачного электрода на основе оксида металла (N – плотность электронов, τ – среднее время рассеяния электронов) на величину частоты, при которой диэлектрическая проницаемость материала ε (эпсилон) становится близкой к нулю (так называемые ENZ или НЭ-материалы).

Процедура и методы

Процедура и методы. С использованием модели Друде выполнены расчёты параметров N, τ и плазменной частоты ω0 в диапазоне параметров материалов, применяемых в электронике, а также для композитных материалов с разной геометрией включений. Приведены параметры материалов на основе оксида цинка и методов их формирования, при которых может реализоваться описанный режим близкой к нулю диэлектрической проницаемости материала.

Результаты

Результаты. Для ряда материалов плёнок прозрачных электродов, применяемых в устройствах управления излучением ближнего ИК-диапазона, исследовано влияние параметров материала (N, τ) на величину частоты, при которой диэлектрическая проницаемость материала ε (эпсилон) становится близкой к нулю (НЭ-материалы). Описаны технологии материалов, в которых может реализоваться НЭ-режим.

Теоретическая и/или практическая значимость. Описанный режим реализуется для ряда материалов плёнок прозрачных электродов, применяемых в устройствах управления излучением ближнего ИК-диапазона.

Aim

Aim. We investigate the effect of the material parameters of a transparent metal oxide electrode (N is the electron density, and τ is the average electron scattering time) on the frequency at which the dielectric constant of the material ε (epsilon) becomes close to zero (the so-called ENZ materials).

Methodology

Methodology. Using the Drude model, the parameters N, τ and the plasma frequency ω0 are calculated in the range of parameters of materials used in electronics, as well as for composite materials with different geometries of inclusions. The parameters of materials based on zinc oxide and methods of their formation are presented, in which the described regime of the dielectric constant of the material close to zero can be realized.

Results

Results. For a number of materials of transparent electrode films used in near-IR radiation control devices, the influence of material parameters (N and τ) on the frequency at which the dielectric constant of the material ε (epsilon) becomes close to zero (ENZ materials) is studied. The technologies of materials in which the ENZ mode can be implemented are described.

Research implications

Research implications. The described mode is implemented for a number of transparent electrode film materials used in near-IR radiation control devices.

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